منابع مشابه
Induced Ferromagnetism at BiFeO3/YBa2Cu3O7 Interfaces
Transition metal oxides (TMOs) exhibit many emergent phenomena ranging from high-temperature superconductivity and giant magnetoresistance to magnetism and ferroelectricity. In addition, when TMOs are interfaced with each other, new functionalities can arise, which are absent in individual components. Here, we report results from first-principles calculations on the magnetism at the BiFeO3/YBa2...
متن کاملLocal weak ferromagnetism in single-crystalline ferroelectric BiFeO3.
Polarized small-angle neutron scattering studies of single-crystalline multiferroic BiFeO(3) reveal a long-wavelength spin density wave generated by ∼1° spin canting of the spins out of the rotation plane of the antiferromagnetic cycloidal order. This signifies weak ferromagnetism within mesoscopic regions of dimension 0.03 microns along [110], to several microns along [111], confirming a long-...
متن کاملNanoscale Domain Control in Multiferroic BiFeO3 Thin Films
With an ever-expanding demand for data storage, transducers, and microelectromechanical (MEMS) systems applications, materials with superior ferroelectric and piezoelectric responses are of great interest. The lead zirconate titanate (PZT) family of materials has served as the cornerstone for such applications up until now. A critical drawback of this material, however, is the presence of lead ...
متن کاملNanoscale piezoresponse studies of ferroelectric domains in epitaxial BiFeO3 nanostructures
BiFeO3 nanostructures Seungbum Hong, Jeffrey A. Klug, Moonkyu Park, Alexandra Imre, Michael J. Bedzyk, Kwangsoo No, Amanda Petford-Long, and Orlando Auciello Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Lemont, Illinois 60439, USA Center for Nanoscale Materials, Argonne National Laboratory, Illinois 60439, USA Department of Physics and Astronomy, Northwestern...
متن کاملEnhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges
The problem of weak magnetism has hindered the application of magnetic semiconductors since their invention, and on the other hand, the magnetic mechanism of GaN-based magnetic semiconductors has been the focus of long-standing debate. In this work, nanoscale GaN:Mn wires were grown on the top of GaN ridges by metalorganic chemical vapor deposition (MOCVD), and the superconducting quantum inter...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2007
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2768201